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RM24C256DS-LSNI-B Dialog Semiconductor


rm24c256ds_085.pdf Hersteller: Dialog Semiconductor
EEPROM Serial-I2C 256K-bit 512Pages x 64 1.8V/2.5V/3.3V 8-Pin SOIC N Tube
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Technische Details RM24C256DS-LSNI-B Dialog Semiconductor

Description: IC CBRAM 256KBIT I2C 1MHZ 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Memory Size: 256Kbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: CBRAM, Clock Frequency: 1 MHz, Memory Format: CBRAM®, Supplier Device Package: 8-SOIC, Write Cycle Time - Word, Page: 100µs, 2.5ms, Memory Interface: I2C, Memory Organization: 64 Bytes Page Size, DigiKey Programmable: Not Verified.

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RM24C256DS-LSNI-B RM24C256DS-LSNI-B Hersteller : Renesas Electronics Corporation RM24C256DS%20Series%20Datasheet.pdf Description: IC CBRAM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: CBRAM
Clock Frequency: 1 MHz
Memory Format: CBRAM®
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 100µs, 2.5ms
Memory Interface: I2C
Memory Organization: 64 Bytes Page Size
DigiKey Programmable: Not Verified
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