RM25C64DS-LSNI-B

RM25C64DS-LSNI-B Renesas Electronics Corporation


Hersteller: Renesas Electronics Corporation
Description: IC CBRAM 64KBIT SPI 20MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: CBRAM
Clock Frequency: 20 MHz
Memory Format: CBRAM®
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 100µs, 2.5ms
Memory Interface: SPI
Memory Organization: 32 Bytes Page Size
DigiKey Programmable: Not Verified
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Technische Details RM25C64DS-LSNI-B Renesas Electronics Corporation

Description: IC CBRAM 64KBIT SPI 20MHZ 8SOIC, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Memory Size: 64Kbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 85°C (TA), Voltage - Supply: 1.65V ~ 3.6V, Technology: CBRAM, Clock Frequency: 20 MHz, Memory Format: CBRAM®, Supplier Device Package: 8-SOIC, Part Status: Obsolete, Write Cycle Time - Word, Page: 100µs, 2.5ms, Memory Interface: SPI, Memory Organization: 32 Bytes Page Size, DigiKey Programmable: Not Verified.

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RM25C64DS-LSNI-B RM25C64DS-LSNI-B Hersteller : Adesto Technologies RM25C64DS_125-1385721.pdf EEPROM 64K 1.65V-3.6V SPI 20MHz IND TEMP
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