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RM3003S6 Rectron


rm3003s6.pdf Hersteller: Rectron
N and P-Channel Enhancement Mode Power MOSFET
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Technische Details RM3003S6 Rectron

Description: MOSFET N&P-CH 30V 3.5/2.7A SOT23, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, 199pF @ 15V, Rds On (Max) @ Id, Vgs: 58mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V, Vgs(th) (Max) @ Id: 1.3V @ 250µA, 2.5V @ 250µA, Supplier Device Package: TSOT-23-6L, Part Status: Active.

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RM3003S6 RM3003S6 Hersteller : Rectron USA rm3003s6.pdf Description: MOSFET N&P-CH 30V 3.5/2.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 2.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 15V, 199pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 3.5A, 10V, 100mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA, 2.5V @ 250µA
Supplier Device Package: TSOT-23-6L
Part Status: Active
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