Produkte > RECTRON USA > RM3075S8(N)
RM3075S8(N)

RM3075S8(N) Rectron USA


rm3075s8.pdf Hersteller: Rectron USA
Description: MOSFET N&P-CH 30V 6.8A/4.6A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 4.6A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, 16nC @ 10V
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 8-SOP
Part Status: Active
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details RM3075S8(N) Rectron USA

Description: MOSFET N&P-CH 30V 6.8A/4.6A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), 4.6A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 383pF @ 15V, Rds On (Max) @ Id, Vgs: 27mOhm @ 6.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V, 16nC @ 10V, Vgs(th) (Max) @ Id: 2.3V @ 10µA, Supplier Device Package: 8-SOP, Part Status: Active.