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RM30P55LD

RM30P55LD Rectron


486rm30p55ld1.pdf Hersteller: Rectron
P-Channel Enhancement Mode Power MOSFET
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Technische Details RM30P55LD Rectron

Description: MOSFET P-CHANNEL 55V 30A TO252-2, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V, Power Dissipation (Max): 65W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252-2, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V.

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RM30P55LD RM30P55LD Hersteller : Rectron USA rm30p55ld(1).PDF Description: MOSFET P-CHANNEL 55V 30A TO252-2
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
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