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RM8N650IP

RM8N650IP Rectron USA


rm8n650ip(ld).pdf Hersteller: Rectron USA
Description: MOSFET N-CHANNEL 650V 8A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V
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Technische Details RM8N650IP Rectron USA

Description: MOSFET N-CHANNEL 650V 8A TO251, Packaging: Tube, Package / Case: TO-251-3 Stub Leads, IPak, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-251, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 50 V.

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RM8N650IP Hersteller : Rectron rm8n650ip(ld)-1396181.pdf MOSFET TO-251 MOSFET
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