Technische Details RS3M R6 Taiwan Semiconductor
Description: DIODE GEN PURP 1KV 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 500 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.
Weitere Produktangebote RS3M R6
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| RS3M R6 | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 3A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
Produkt ist nicht verfügbar |
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RS3M R6 | Hersteller : Taiwan Semiconductor | Rectifiers 500ns 3A 1000V Fast Recovery Rectifier |
Produkt ist nicht verfügbar |