S10MC R7G Taiwan Semiconductor
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Technische Details S10MC R7G Taiwan Semiconductor
Description: DIODE GEN PURP 1KV 10A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A, Current - Reverse Leakage @ Vr: 1 µA @ 1000 V.
Weitere Produktangebote S10MC R7G
Foto | Bezeichnung | Hersteller | Beschreibung |
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S10MC R7G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214AB Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
Produkt ist nicht verfügbar |
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S10MC R7G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 1KV 10A DO214AB Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
Produkt ist nicht verfügbar |
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S10MC R7G | Hersteller : Taiwan Semiconductor | Rectifiers 10A, 1000V, Standard Recovery Rectifier |
Produkt ist nicht verfügbar |