S1FLK-GS08 Vishay Semiconductors
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Technische Details S1FLK-GS08 Vishay Semiconductors
Description: DIODE GP 800V 700MA DO219AB, Packaging: Tape & Reel (TR), Package / Case: DO-219AB, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.8 µs, Technology: Standard, Capacitance @ Vr, F: 4pF @ 4V, 1MHz, Current - Average Rectified (Io): 700mA, Supplier Device Package: DO-219AB (SMF), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
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S1FLK-GS08 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GP 800V 700MA DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8 µs Technology: Standard Capacitance @ Vr, F: 4pF @ 4V, 1MHz Current - Average Rectified (Io): 700mA Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
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