S1JFSHMWG

S1JFSHMWG Taiwan Semiconductor Corporation


S1DFS%20SERIES_C2103.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD128
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
28+ 0.94 EUR
100+ 0.58 EUR
500+ 0.4 EUR
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Technische Details S1JFSHMWG Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 600V 1A SOD128, Packaging: Tape & Reel (TR), Package / Case: SOD-128, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 9pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-128, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.

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S1JFSHMWG S1JFSHMWG Hersteller : Taiwan Semiconductor Corporation S1DFS%20SERIES_C2103.pdf Description: DIODE GEN PURP 600V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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S1JFSHMWG S1JFSHMWG Hersteller : Taiwan Semiconductor S1DFS%20SERIES_A1708-1313566.pdf Rectifiers
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