S3BHE3_A/H Vishay General Semiconductor
auf Bestellung 1852 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.3 EUR |
| 46+ | 1.14 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.67 EUR |
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Technische Details S3BHE3_A/H Vishay General Semiconductor
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 100V; 3A; 2.5us; SMC; Ufmax: 1.15V; Ifsm: 100A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 100V, Load current: 3A, Reverse recovery time: 2.5µs, Semiconductor structure: single diode, Features of semiconductor devices: glass passivated, Capacitance: 60pF, Max. forward voltage: 1.15V, Case: SMC, Kind of package: reel; tape, Leakage current: 0.25mA, Max. forward impulse current: 100A, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S3BHE3_A/H
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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S3BHE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 100V 3A DO214AB |
auf Bestellung 1644 Stücke: Lieferzeit 21-28 Tag (e) |
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S3BHE3_A/H | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 3A DO214AB |
auf Bestellung 850 Stücke: Lieferzeit 21-28 Tag (e) |
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| S3BHE3_A/H | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 3A; 2.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Reverse recovery time: 2.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 60pF Max. forward voltage: 1.15V Case: SMC Kind of package: reel; tape Leakage current: 0.25mA Max. forward impulse current: 100A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| S3BHE3_A/H | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 3A; 2.5us; SMC; Ufmax: 1.15V; Ifsm: 100A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 3A Reverse recovery time: 2.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 60pF Max. forward voltage: 1.15V Case: SMC Kind of package: reel; tape Leakage current: 0.25mA Max. forward impulse current: 100A |
Produkt ist nicht verfügbar |