S4PB-M3/86A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE GEN PURP 100V 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
24+ | 0.76 EUR |
28+ | 0.64 EUR |
100+ | 0.45 EUR |
500+ | 0.35 EUR |
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Technische Details S4PB-M3/86A Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 4A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.5 µs, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote S4PB-M3/86A nach Preis ab 0.27 EUR bis 0.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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S4PB-M3/86A | Hersteller : Vishay General Semiconductor | Rectifiers 4.0 Amp 100 Volt |
auf Bestellung 1851 Stücke: Lieferzeit 10-14 Tag (e) |
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S4PB-M3/86A | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 4A; 2.5us; SMPC; Ufmax: 0.95V; Ir: 100uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Semiconductor structure: single diode Capacitance: 30pF Case: SMPC Features of semiconductor devices: glass passivated Max. forward voltage: 0.95V Leakage current: 0.1mA Max. forward impulse current: 100A Reverse recovery time: 2.5µs Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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S4PB-M3/86A | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 100V 4A TO277A Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 30pF @ 4V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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S4PB-M3/86A | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 100V; 4A; 2.5us; SMPC; Ufmax: 0.95V; Ir: 100uA Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 4A Semiconductor structure: single diode Capacitance: 30pF Case: SMPC Features of semiconductor devices: glass passivated Max. forward voltage: 0.95V Leakage current: 0.1mA Max. forward impulse current: 100A Reverse recovery time: 2.5µs Kind of package: reel; tape |
Produkt ist nicht verfügbar |