S4PM-M3/86A

S4PM-M3/86A Vishay General Semiconductor


s4pm.pdf Hersteller: Vishay General Semiconductor
Rectifiers 4.0 Amp 1000 Volt
auf Bestellung 62 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
53+0.99 EUR
54+ 0.97 EUR
100+ 0.67 EUR
500+ 0.53 EUR
1500+ 0.4 EUR
Mindestbestellmenge: 53
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Technische Details S4PM-M3/86A Vishay General Semiconductor

Description: DIODE GEN PURP 1KV 4A TO277A, Packaging: Tape & Reel (TR), Package / Case: TO-277, 3-PowerDFN, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.5 µs, Technology: Standard, Capacitance @ Vr, F: 30pF @ 4V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: TO-277A (SMPC), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A, Current - Reverse Leakage @ Vr: 10 µA @ 1000 V.

Weitere Produktangebote S4PM-M3/86A nach Preis ab 0.63 EUR bis 1.25 EUR

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Preis ohne MwSt
S4PM-M3/86A S4PM-M3/86A Hersteller : Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 1470 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.25 EUR
25+ 1.07 EUR
100+ 0.8 EUR
500+ 0.63 EUR
Mindestbestellmenge: 21
S4PM-M3/86A Hersteller : VISHAY s4pm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 4A; 2.5us; SMPC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 4A
Reverse recovery time: 2.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 30pF
Case: SMPC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.1mA
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
S4PM-M3/86A S4PM-M3/86A Hersteller : Vishay General Semiconductor - Diodes Division s4pm.pdf Description: DIODE GEN PURP 1KV 4A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
S4PM-M3/86A Hersteller : VISHAY s4pm.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 4A; 2.5us; SMPC; Ufmax: 0.95V; Ifsm: 100A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 4A
Reverse recovery time: 2.5µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 30pF
Case: SMPC
Max. forward voltage: 0.95V
Max. forward impulse current: 100A
Leakage current: 0.1mA
Kind of package: reel; tape
Produkt ist nicht verfügbar