SA40CA-E3/73 Vishay Semiconductor Diodes Division
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
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Technische Details SA40CA-E3/73 Vishay Semiconductor Diodes Division
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 44.4÷49.1V; 7.8A; bidirectional; DO15; 500W; Ammo Pack, Technology: TransZorb®, Case: DO15, Mounting: THT, Kind of package: Ammo Pack, Semiconductor structure: bidirectional, Max. off-state voltage: 40V, Features of semiconductor devices: glass passivated, Leakage current: 1µA, Type of diode: TVS, Breakdown voltage: 44.4...49.1V, Max. forward impulse current: 7.8A, Peak pulse power dissipation: 500W, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote SA40CA-E3/73
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SA40CA-E3/73 | Hersteller : Vishay | TVS Diode Single Bi-Dir 40V 500W 2-Pin DO-15 Ammo |
Produkt ist nicht verfügbar |
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SA40CA-E3/73 | Hersteller : VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 44.4÷49.1V; 7.8A; bidirectional; DO15; 500W; Ammo Pack Technology: TransZorb® Case: DO15 Mounting: THT Kind of package: Ammo Pack Semiconductor structure: bidirectional Max. off-state voltage: 40V Features of semiconductor devices: glass passivated Leakage current: 1µA Type of diode: TVS Breakdown voltage: 44.4...49.1V Max. forward impulse current: 7.8A Peak pulse power dissipation: 500W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SA40CA-E3/73 | Hersteller : Vishay Semiconductors | ESD Suppressors / TVS Diodes 500W 40V Bidirect |
Produkt ist nicht verfügbar |
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SA40CA-E3/73 | Hersteller : Vishay General Semiconductor | ESD Suppressors / TVS Diodes 500W 40V Bidirect |
Produkt ist nicht verfügbar |
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SA40CA-E3/73 | Hersteller : VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 44.4÷49.1V; 7.8A; bidirectional; DO15; 500W; Ammo Pack Technology: TransZorb® Case: DO15 Mounting: THT Kind of package: Ammo Pack Semiconductor structure: bidirectional Max. off-state voltage: 40V Features of semiconductor devices: glass passivated Leakage current: 1µA Type of diode: TVS Breakdown voltage: 44.4...49.1V Max. forward impulse current: 7.8A Peak pulse power dissipation: 500W |
Produkt ist nicht verfügbar |