Technische Details SCH1430-TL-H ON Semiconductor
Description: MOSFET N-CH 20V 2A 6SCH, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 4.5V, Power Dissipation (Max): 800mW (Ta), Supplier Device Package: 6-SCH, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 128 pF @ 10 V.
Weitere Produktangebote SCH1430-TL-H
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SCH1430-TL-H | Hersteller : ON Semiconductor |
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auf Bestellung 8944 Stücke: Lieferzeit 21-28 Tag (e) |
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SCH1430-TL-H | Hersteller : onsemi |
Description: MOSFET N-CH 20V 2A 6SCH Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 1A, 4.5V Power Dissipation (Max): 800mW (Ta) Supplier Device Package: 6-SCH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 128 pF @ 10 V |
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