Technische Details SFP9530 ON Semiconductor
Description: MOSFET P-CH 100V 10.5A TO220-3, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 5.3A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V.
Weitere Produktangebote SFP9530
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SFP9530 | Hersteller : ONSEMI |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -7.5A; 66W; TO220-3 Drain-source voltage: -100V Drain current: -7.5A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 66W Polarisation: unipolar Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: TO220-3 Anzahl je Verpackung: 1 Stücke |
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SFP9530 | Hersteller : Fairchild Semiconductor |
Description: MOSFET P-CH 100V 10.5A TO220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 5.3A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 25 V |
Produkt ist nicht verfügbar |
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SFP9530 | Hersteller : onsemi / Fairchild |
MOSFET PCh/100V/1.5a/ .3Ohm |
Produkt ist nicht verfügbar |
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| SFP9530 | Hersteller : ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -7.5A; 66W; TO220-3 Drain-source voltage: -100V Drain current: -7.5A On-state resistance: 0.3Ω Type of transistor: P-MOSFET Power dissipation: 66W Polarisation: unipolar Kind of package: tube Kind of channel: enhanced Gate-source voltage: ±30V Mounting: THT Case: TO220-3 |
Produkt ist nicht verfügbar |