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SFT1443-H

SFT1443-H onsemi

SFT1443.pdf Hersteller: onsemi
Description: MOSFET N-CH 100V 9A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta), 19W (Tc)
Supplier Device Package: IPAK/TP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 20 V
auf Bestellung 1081 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
784+0.94 EUR
Mindestbestellmenge: 784
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Technische Details SFT1443-H onsemi

Description: MOSFET N-CH 100V 9A TP, Packaging: Bulk, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 225mOhm @ 3A, 10V, Power Dissipation (Max): 1W (Ta), 19W (Tc), Supplier Device Package: IPAK/TP, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 20 V.

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SFT1443-H Hersteller : ONSEMI ONSMS39205-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - SFT1443-H - SFT1443-H, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 1081 Stücke:
Lieferzeit 14-21 Tag (e)
SFT1443-H SFT1443-H Hersteller : onsemi SFT1443.pdf Description: MOSFET N-CH 100V 9A TP
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 3A, 10V
Power Dissipation (Max): 1W (Ta), 19W (Tc)
Supplier Device Package: IPAK/TP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 20 V
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