SGP23N60UFTU

SGP23N60UFTU ON Semiconductor / Fairchild


SGP23N60UF-D-1814908.pdf Hersteller: ON Semiconductor / Fairchild
IGBT Transistors Dis High Perf IGBT
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Technische Details SGP23N60UFTU ON Semiconductor / Fairchild

Description: IGBT 600V 23A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 17ns/60ns, Switching Energy: 115µJ (on), 135µJ (off), Test Condition: 300V, 12A, 23Ohm, 15V, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 92 A, Power - Max: 100 W.

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SGP23N60UFTU SGP23N60UFTU Hersteller : ON Semiconductor 3664913408045821sgp23n60uf.pdf Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Tube
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SGP23N60UFTU SGP23N60UFTU Hersteller : onsemi sgp23n60uf-d.pdf Description: IGBT 600V 23A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 17ns/60ns
Switching Energy: 115µJ (on), 135µJ (off)
Test Condition: 300V, 12A, 23Ohm, 15V
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Produkt ist nicht verfügbar