SGP23N60UFTU ON Semiconductor / Fairchild
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Technische Details SGP23N60UFTU ON Semiconductor / Fairchild
Description: IGBT 600V 23A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 17ns/60ns, Switching Energy: 115µJ (on), 135µJ (off), Test Condition: 300V, 12A, 23Ohm, 15V, Current - Collector (Ic) (Max): 23 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 92 A, Power - Max: 100 W.
Weitere Produktangebote SGP23N60UFTU
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SGP23N60UFTU | Hersteller : ON Semiconductor | Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
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SGP23N60UFTU | Hersteller : onsemi |
Description: IGBT 600V 23A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 12A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 17ns/60ns Switching Energy: 115µJ (on), 135µJ (off) Test Condition: 300V, 12A, 23Ohm, 15V Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 92 A Power - Max: 100 W |
Produkt ist nicht verfügbar |