Technische Details SI1016X-T1-E3 VISHAY
Description: MOSFET N/P-CH 20V SOT563F, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA, Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SC-89 (SOT-563F).
Weitere Produktangebote SI1016X-T1-E3
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| SI1016X-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1016X-T1-E3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 20V 0.485A/0.37A 6-Pin SC-89 T/R |
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SI1016X-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V SOT563F Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89 (SOT-563F) |
Produkt ist nicht verfügbar |
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SI1016X-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V SOT563F Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 485mA, 370mA Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.75nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-89 (SOT-563F) |
Produkt ist nicht verfügbar |