SI1021R-T1-GE3

SI1021R-T1-GE3

SI1021R-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 190MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V

71410.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 9000 Stücke
Lieferzeit 21-28 Tag (e)
3000+ 0.52 EUR
6000+ 0.5 EUR

Technische Details SI1021R-T1-GE3

Description: MOSFET P-CH 60V 190MA SC-75A, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Current - Continuous Drain (Id) @ 25°C: 190mA (Ta), Drain to Source Voltage (Vdss): 60V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Package / Case: SC-75A, Supplier Device Package: SC-75A, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power Dissipation (Max): 250mW (Ta), Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V, Vgs(th) (Max) @ Id: 3V @ 250µA, Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V.

Preis SI1021R-T1-GE3 ab 0.5 EUR bis 1.48 EUR

SI1021R-T1-GE3
SI1021R-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET -60V Vds 20V Vgs SC75A
VISH_S_A0001121656_1-2567037.pdf
auf Bestellung 14439 Stücke
Lieferzeit 14-28 Tag (e)
36+ 1.48 EUR
41+ 1.29 EUR
100+ 0.96 EUR
500+ 0.76 EUR
SI1021R-T1-GE3
SI1021R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 190MA SC75A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 23 pF @ 25 V
71410.pdf
auf Bestellung 9800 Stücke
Lieferzeit 21-28 Tag (e)
18+ 1.48 EUR
21+ 1.26 EUR
100+ 0.94 EUR
500+ 0.74 EUR
1000+ 0.57 EUR
SI1021R-T1-GE3
SI1021R-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 60V 0.19A 3-Pin SC-75A T/R
71410.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1021R-T1-GE3
Hersteller: VISHAY
Material: SI1021R-T1-GE3 SMD P channel transistors
71410.pdf 71410.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1021R-T1-GE3
Hersteller: VISHAY
Material: SI1021R-T1-GE3 SMD P channel transistors
71410.pdf 71410.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1021R-T1-GE3
SI1021R-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 190MA SC-75A
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-75A
Supplier Device Package: SC-75A
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 250mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 23pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 1.7nC @ 15V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
71410.pdf
auf Bestellung 36928 Stücke
Lieferzeit 21-28 Tag (e)