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SI1023X-T1-GE3

SI1023X-T1-GE3 Vishay Siliconix


71169.pdf Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 0.37A SC89-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.4 EUR
Mindestbestellmenge: 3000
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Technische Details SI1023X-T1-GE3 Vishay Siliconix

Description: MOSFET 2P-CH 20V 0.37A SC89-6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 370mA, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: SC-89 (SOT-563F).

Weitere Produktangebote SI1023X-T1-GE3 nach Preis ab 0.42 EUR bis 1.14 EUR

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SI1023X-T1-GE3 SI1023X-T1-GE3 Hersteller : Vishay Semiconductors 71169.pdf MOSFET Dual P-Ch MOSFET 20V 1.2 ohms @ 4.5V
auf Bestellung 45117 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.94 EUR
65+ 0.81 EUR
100+ 0.6 EUR
500+ 0.47 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 56
SI1023X-T1-GE3 SI1023X-T1-GE3 Hersteller : Vishay Siliconix 71169.pdf Description: MOSFET 2P-CH 20V 0.37A SC89-6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 370mA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Supplier Device Package: SC-89 (SOT-563F)
auf Bestellung 3001 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
27+ 0.97 EUR
100+ 0.73 EUR
500+ 0.57 EUR
1000+ 0.44 EUR
Mindestbestellmenge: 23
SI1023X-T1-GE3 Hersteller : VISHAY 71169.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -390mA; 280mW
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -390mA
Pulsed drain current: -0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1023X-T1-GE3 SI1023X-T1-GE3 Hersteller : Vishay 71169.pdf Trans MOSFET P-CH 20V 0.37A 6-Pin SC-89 T/R
Produkt ist nicht verfügbar
SI1023X-T1-GE3 Hersteller : VISHAY 71169.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -390mA; 280mW
Type of transistor: P-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -390mA
Pulsed drain current: -0.65A
Power dissipation: 0.28W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 2.7Ω
Mounting: SMD
Gate charge: 1.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar