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SI1031R-T1-GE3

SI1031R-T1-GE3 Vishay Siliconix

si1031r.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 140MA SC75A
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 19800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.36 EUR
Mindestbestellmenge: 3000
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Technische Details SI1031R-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 140MA SC75A, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 140mA (Ta), Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V, Power Dissipation (Max): 250mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-75A, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V.

Weitere Produktangebote SI1031R-T1-GE3 nach Preis ab 0.3 EUR bis 1.27 EUR

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SI1031R-T1-GE3 SI1031R-T1-GE3 Hersteller : Vishay Semiconductors si1031r.pdf MOSFET 20V 150mA 280mW 8.0ohm @ 4.5V
auf Bestellung 6616 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
45+1.17 EUR
58+ 0.9 EUR
100+ 0.63 EUR
500+ 0.48 EUR
1000+ 0.36 EUR
3000+ 0.32 EUR
6000+ 0.3 EUR
Mindestbestellmenge: 45
SI1031R-T1-GE3 SI1031R-T1-GE3 Hersteller : Vishay Siliconix si1031r.pdf Description: MOSFET P-CH 20V 140MA SC75A
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 140mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Power Dissipation (Max): 250mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-75A
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
auf Bestellung 20366 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
21+1.27 EUR
26+ 1.02 EUR
100+ 0.69 EUR
500+ 0.52 EUR
1000+ 0.39 EUR
Mindestbestellmenge: 21
SI1031R-T1-GE3 SI1031R-T1-GE3 Hersteller : Vishay si1031r.pdf Trans MOSFET P-CH 20V 0.14A 3-Pin SC-75A T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
SI1031R-T1-GE3 Hersteller : VISHAY si1031r.pdf SI1031R-T1-GE3 SMD P channel transistors
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