SI1032X-T1-GE3 Vishay Semiconductors
auf Bestellung 82638 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
62+ | 0.85 EUR |
73+ | 0.72 EUR |
100+ | 0.54 EUR |
500+ | 0.44 EUR |
1000+ | 0.37 EUR |
3000+ | 0.34 EUR |
9000+ | 0.33 EUR |
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Technische Details SI1032X-T1-GE3 Vishay Semiconductors
Description: MOSFET N-CH 20V 200MA SC89-3, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-89-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V.
Weitere Produktangebote SI1032X-T1-GE3 nach Preis ab 0.38 EUR bis 1.01 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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SI1032X-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 200MA SC89-3 Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V |
auf Bestellung 2634 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1032X-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 200MA SC89-3 Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V |
auf Bestellung 2634 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1032X-T1-GE3 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1032X-T1-GE3 | Hersteller : Vishay | Trans MOSFET N-CH 20V 0.2A 3-Pin SC-89 T/R |
Produkt ist nicht verfügbar |
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SI1032X-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 210mA; Idm: 0.6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.21A Pulsed drain current: 0.6A Power dissipation: 0.34W Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI1032X-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 210mA; Idm: 0.6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.21A Pulsed drain current: 0.6A Power dissipation: 0.34W Case: SC89; SOT563 Gate-source voltage: ±6V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.75nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |