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SI1032X-T1-GE3

SI1032X-T1-GE3 Vishay Semiconductors


si1032rx.pdf Hersteller: Vishay Semiconductors
MOSFET 20V 200mA 340mW 5.0ohm @ 4.5V
auf Bestellung 82638 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
62+0.85 EUR
73+ 0.72 EUR
100+ 0.54 EUR
500+ 0.44 EUR
1000+ 0.37 EUR
3000+ 0.34 EUR
9000+ 0.33 EUR
Mindestbestellmenge: 62
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Technische Details SI1032X-T1-GE3 Vishay Semiconductors

Description: MOSFET N-CH 20V 200MA SC89-3, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-89-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V.

Weitere Produktangebote SI1032X-T1-GE3 nach Preis ab 0.38 EUR bis 1.01 EUR

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SI1032X-T1-GE3 SI1032X-T1-GE3 Hersteller : Vishay Siliconix si1032rx.pdf Description: MOSFET N-CH 20V 200MA SC89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 2634 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
30+ 0.87 EUR
100+ 0.61 EUR
500+ 0.47 EUR
1000+ 0.38 EUR
Mindestbestellmenge: 26
SI1032X-T1-GE3 SI1032X-T1-GE3 Hersteller : Vishay Siliconix si1032rx.pdf Description: MOSFET N-CH 20V 200MA SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.75 nC @ 4.5 V
auf Bestellung 2634 Stücke:
Lieferzeit 21-28 Tag (e)
SI1032X-T1-GE3 si1032rx.pdf
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
SI1032X-T1-GE3 SI1032X-T1-GE3 Hersteller : Vishay si1032r.pdf Trans MOSFET N-CH 20V 0.2A 3-Pin SC-89 T/R
Produkt ist nicht verfügbar
SI1032X-T1-GE3 Hersteller : VISHAY si1032rx.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 210mA; Idm: 0.6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.21A
Pulsed drain current: 0.6A
Power dissipation: 0.34W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1032X-T1-GE3 Hersteller : VISHAY si1032rx.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 210mA; Idm: 0.6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.21A
Pulsed drain current: 0.6A
Power dissipation: 0.34W
Case: SC89; SOT563
Gate-source voltage: ±6V
On-state resistance: 10Ω
Mounting: SMD
Gate charge: 0.75nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar