SI1317DL-T1-GE3

SI1317DL-T1-GE3

SI1317DL-T1-GE3

Hersteller: Vishay
Trans MOSFET P-CH 20V 1.4A 3-Pin SC-70 T/R
si1317dl.pdf
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Technische Details SI1317DL-T1-GE3

Description: MOSFET P-CH 20V 1.4A SOT323, Base Part Number: SI1317, Package / Case: SC-70, SOT-323, Supplier Device Package: SC-70-3, Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Power Dissipation (Max): 500mW (Tc), Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V, Vgs (Max): ±8V, Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Drain to Source Voltage (Vdss): 20V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Active, Packaging: Tape & Reel (TR), Manufacturer: Vishay Siliconix.

Preis SI1317DL-T1-GE3 ab 0 EUR bis 0 EUR

SI1317DL-T1-GE3
Hersteller: VISHAY
Material: SI1317DL-T1-GE3 SMD P channel transistors
si1317dl.pdf si1317dl.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1317DL-T1-GE3
Hersteller: VISHAY
Material: SI1317DL-T1-GE3 SMD P channel transistors
si1317dl.pdf si1317dl.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1317DL-T1-GE3
SI1317DL-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET -20V Vds 8V Vgs SC70-3
si1317dl-1765215.pdf
auf Bestellung 129400 Stücke
Lieferzeit 14-28 Tag (e)
SI1317DL-T1-GE3
SI1317DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SOT323
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: SI1317
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
Vgs (Max): ±8V
si1317dl.pdf
auf Bestellung 6411 Stücke
Lieferzeit 21-28 Tag (e)
SI1317DL-T1-GE3
SI1317DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SOT323
Base Part Number: SI1317
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Vishay Siliconix
si1317dl.pdf
auf Bestellung 6000 Stücke
Lieferzeit 21-28 Tag (e)
SI1317DL-T1-GE3
SI1317DL-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 500mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 272pF @ 10V
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.4A, 4.5V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Drain to Source Voltage (Vdss): 20V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323
Mounting Type: Surface Mount
si1317dl.pdf
auf Bestellung 2729 Stücke
Lieferzeit 21-28 Tag (e)