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SI1403BDL-T1-E3

SI1403BDL-T1-E3 Vishay Siliconix


si1403bdl.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 1.4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 568mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.41 EUR
Mindestbestellmenge: 3000
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Technische Details SI1403BDL-T1-E3 Vishay Siliconix

Description: MOSFET P-CH 20V 1.4A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 568mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V.

Weitere Produktangebote SI1403BDL-T1-E3 nach Preis ab 0.41 EUR bis 1.23 EUR

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SI1403BDL-T1-E3 SI1403BDL-T1-E3 Hersteller : Vishay Siliconix si1403bdl.pdf Description: MOSFET P-CH 20V 1.4A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 568mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 4960 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.22 EUR
26+ 1.03 EUR
100+ 0.72 EUR
500+ 0.56 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 22
SI1403BDL-T1-E3 SI1403BDL-T1-E3 Hersteller : Vishay Semiconductors si1403bdl.pdf MOSFET -20V Vds 12V Vgs SC-70
auf Bestellung 42179 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
43+1.23 EUR
50+ 1.05 EUR
100+ 0.73 EUR
500+ 0.41 EUR
Mindestbestellmenge: 43
SI1403BDL-T1-E3 SI1403BDL-T1-E3 Hersteller : Vishay si1403bdl.pdf Trans MOSFET P-CH 20V 1.4A 6-Pin SC-70 T/R
Produkt ist nicht verfügbar
SI1403BDL-T1-E3 Hersteller : VISHAY si1403bdl.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.625W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5A
Case: SC70; SOT323
Drain-source voltage: -20V
Drain current: -1.5A
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SI1403BDL-T1-E3 Hersteller : VISHAY si1403bdl.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A
Mounting: SMD
On-state resistance: 265mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.625W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 4.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5A
Case: SC70; SOT323
Drain-source voltage: -20V
Drain current: -1.5A
Produkt ist nicht verfügbar