SI1403BDL-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 20V 1.5A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 625mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.41 EUR |
| 6000+ | 0.39 EUR |
| 9000+ | 0.36 EUR |
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Technische Details SI1403BDL-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 1.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta), Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 625mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V.
Weitere Produktangebote SI1403BDL-T1-GE3 nach Preis ab 0.41 EUR bis 1.21 EUR
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SI1403BDL-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 1.5A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Power Dissipation (Max): 625mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 4.5 V |
auf Bestellung 19210 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1403BDL-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A Mounting: SMD Power dissipation: 0.625W Drain-source voltage: -20V Drain current: -1.5A On-state resistance: 265mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -5A Case: SC70; SOT323 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI1403BDL-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -1.5A; Idm: -5A Mounting: SMD Power dissipation: 0.625W Drain-source voltage: -20V Drain current: -1.5A On-state resistance: 265mΩ Type of transistor: P-MOSFET Polarisation: unipolar Kind of package: reel; tape Gate charge: 4.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -5A Case: SC70; SOT323 |
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