Produkte > SI1 > SI1404BDH-T1-E3

SI1404BDH-T1-E3


si1404bd.pdf Hersteller:

auf Bestellung 2666 Stücke:

Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details SI1404BDH-T1-E3

Description: MOSFET N-CH 30V 1.9A/2.37A SC70, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc), Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V, Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V.

Weitere Produktangebote SI1404BDH-T1-E3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI1404BDH-T1-E3 SI1404BDH-T1-E3 Hersteller : Vishay Siliconix si1404bd.pdf Description: MOSFET N-CH 30V 1.9A/2.37A SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.37A (Tc)
Rds On (Max) @ Id, Vgs: 238mOhm @ 1.9A, 4.5V
Power Dissipation (Max): 1.32W (Ta), 2.28W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 15 V
Produkt ist nicht verfügbar
SI1404BDH-T1-E3 SI1404BDH-T1-E3 Hersteller : Vishay / Siliconix si1404bd.pdf MOSFET 30V 1.9A 2.25W
Produkt ist nicht verfügbar