SI1405DL-T1-E3

SI1405DL-T1-E3

Hersteller:

si1405dl.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
6000 Stücke

Technische Details SI1405DL-T1-E3

Description: MOSFET P-CH 8V 1.6A SC-70-6, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Rds On (Max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Drain to Source Voltage (Vdss): 8V, FET Type: MOSFET P-Channel, Metal Oxide, Supplier Device Package: SC-70-6 (SOT-363), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 568mW.

Preis SI1405DL-T1-E3 ab 0 EUR bis 0 EUR

SI1405DL-T1-E3
Hersteller: VISHAY
09+
si1405dl.pdf
88 Stücke
SI1405DL-T1-E3
SI1405DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
si1405dl.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1405DL-T1-E3
SI1405DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC-70-6
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
si1405dl.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1405DL-T1-E3
SI1405DL-T1-E3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 568mW
si1405dl.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen