SI1405DL-T1-E3
SI1405DL-T1-E3
Hersteller:
Informationen zu Lagerverfügbarkeit und Lieferzeiten
6000 Stücke
6000 Stücke
Technische Details SI1405DL-T1-E3
Description: MOSFET P-CH 8V 1.6A SC-70-6, Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Rds On (Max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta), Drain to Source Voltage (Vdss): 8V, FET Type: MOSFET P-Channel, Metal Oxide, Supplier Device Package: SC-70-6 (SOT-363), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 568mW.
Preis SI1405DL-T1-E3 ab 0 EUR bis 0 EUR
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SI1405DL-T1-E3 Hersteller: VISHAY 09+
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88 Stücke |
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 Hersteller: Vishay Siliconix Description: MOSFET P-CH 8V 1.6A SC-70-6 Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 568mW
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 8V 1.6A SC-70-6 Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 568mW Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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Hersteller: Vishay Siliconix Description: MOSFET P-CH 8V 1.6A SC-70-6 Gate Charge (Qg) (Max) @ Vgs: 7nC @ 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Rds On (Max) @ Id, Vgs: 125 mOhm @ 1.8A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Drain to Source Voltage (Vdss): 8V FET Type: MOSFET P-Channel, Metal Oxide Supplier Device Package: SC-70-6 (SOT-363) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 568mW
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Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
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