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SI1413DH-T1-E3 VISHAY


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Technische Details SI1413DH-T1-E3 VISHAY

Description: MOSFET P-CH 20V 2.3A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 800mV @ 100µA, Supplier Device Package: SC-70-6, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V.

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SI1413DH-T1-E3 SI1413DH-T1-E3 Hersteller : Vishay si1413dh.pdf Trans MOSFET P-CH 20V 2.3A 6-Pin SC-70 T/R
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SI1413DH-T1-E3 SI1413DH-T1-E3 Hersteller : Vishay Siliconix si1413dh.pdf Description: MOSFET P-CH 20V 2.3A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.9A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 100µA
Supplier Device Package: SC-70-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Produkt ist nicht verfügbar
SI1413DH-T1-E3 SI1413DH-T1-E3 Hersteller : Vishay / Siliconix si1413dh.pdf MOSFET 20V 2.9A 1.0W
Produkt ist nicht verfügbar