SI1417EDH-T1-GE3

SI1417EDH-T1-GE3

SI1417EDH-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 2.7A SC-70-6
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Supplier Device Package: SC-70-6 (SOT-363)
Drain to Source Voltage (Vdss): 12V
FET Type: MOSFET P-Channel, Metal Oxide

si1417ed.pdf
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Technische Details SI1417EDH-T1-GE3

Description: MOSFET P-CH 12V 2.7A SC-70-6, Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 1W, Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Supplier Device Package: SC-70-6 (SOT-363), Drain to Source Voltage (Vdss): 12V, FET Type: MOSFET P-Channel, Metal Oxide.

Preis SI1417EDH-T1-GE3 ab 0 EUR bis 0 EUR

SI1417EDH-T1-GE3
SI1417EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 2.7A SC-70-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
FET Type: MOSFET P-Channel, Metal Oxide
si1417ed.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1417EDH-T1-GE3
SI1417EDH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 2.7A SC-70-6
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1W
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Drain to Source Voltage (Vdss): 12V
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
si1417ed.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen