SI1443EDH-T1-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 4A/4A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.33 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI1443EDH-T1-BE3 Vishay Siliconix
Description: MOSFET P-CH 30V 4A/4A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V, Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V.
Weitere Produktangebote SI1443EDH-T1-BE3 nach Preis ab 0.28 EUR bis 1.25 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI1443EDH-T1-BE3 | Hersteller : Vishay / Siliconix |
MOSFET 30V P-CHANNEL (D-S) |
auf Bestellung 94897 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||||
|
|
SI1443EDH-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 4A/4A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 4A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 4.3A, 10V Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V |
auf Bestellung 4971 Stücke: Lieferzeit 21-28 Tag (e) |
|