SI1469DH-T1-GE3 Vishay Semiconductors
auf Bestellung 9000 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 1.45 EUR |
| 41+ | 1.29 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.67 EUR |
| 6000+ | 0.66 EUR |
| 9000+ | 0.62 EUR |
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Technische Details SI1469DH-T1-GE3 Vishay Semiconductors
Description: MOSFET P-CH 20V 2.7A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V, Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V.
Weitere Produktangebote SI1469DH-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI1469DH-T1-GE3 | Hersteller : Vishay / Siliconix |
 MOSFET -20V Vds 12V Vgs SC70-6 |
auf Bestellung 6000 Stücke: Lieferzeit 14-28 Tag (e) |
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| SI1469DH-T1-GE3 | Hersteller : VISHAY |
SI1469DH-T1-GE3 SMD P channel transistors |
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SI1469DH-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 2.7A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI1469DH-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 2.7A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V |
Produkt ist nicht verfügbar |