SI1469DH-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.4 EUR |
| 6000+ | 0.38 EUR |
| 9000+ | 0.35 EUR |
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Technische Details SI1469DH-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: SC-70-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI1469DH-T1-GE3 nach Preis ab 0.35 EUR bis 1.36 EUR
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SI1469DH-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 12V Vgs SC70-6 |
auf Bestellung 8509 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1469DH-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 2.7A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V |
auf Bestellung 14210 Stücke: Lieferzeit 10-14 Tag (e) |
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SI1469DH-T1-GE3 | Vishay / Siliconix |
MOSFET -20V Vds 12V Vgs SC70-6 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI1469DH-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 12V Vgs SC70-6
MOSFETs -20V Vds 12V Vgs SC70-6
auf Bestellung 8509 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 1.27 EUR |
| 10+ | 0.85 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.42 EUR |
| 3000+ | 0.38 EUR |
| 6000+ | 0.35 EUR |
| SI1469DH-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
Description: MOSFET P-CH 20V 2.7A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 10 V
auf Bestellung 14210 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 20+ | 0.89 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.45 EUR |
| SI1469DH-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFET -20V Vds 12V Vgs SC70-6
MOSFET -20V Vds 12V Vgs SC70-6
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH