SI1469DH-T1-GE3

SI1469DH-T1-GE3

SI1469DH-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET -20V Vds 12V Vgs SC70-6
si1469dh-280078.pdf
verfügbar/auf Bestellung
auf Bestellung 6000 Stücke
Lieferzeit 14-28 Tag (e)

Technische Details SI1469DH-T1-GE3

Description: MOSFET P-CH 20V 2.7A SC-70-6, Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc), Drain to Source Voltage (Vdss): 20V, FET Type: MOSFET P-Channel, Metal Oxide, Supplier Device Package: SC-70-6 (SOT-363), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2.78W, Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V.

Preis SI1469DH-T1-GE3 ab 0 EUR bis 0 EUR

SI1469DH-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 20V 3.2A 6-Pin SC-70 T/R
si1469dh.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1469DH-T1-GE3
SI1469DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC-70-6
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
si1469dh.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1469DH-T1-GE3
SI1469DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
si1469dh.pdf
auf Bestellung 99 Stücke
Lieferzeit 21-28 Tag (e)
SI1469DH-T1-GE3
SI1469DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.7A SC-70-6
Supplier Device Package: SC-70-6 (SOT-363)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 2.78W
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 10V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 80mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Drain to Source Voltage (Vdss): 20V
FET Type: MOSFET P-Channel, Metal Oxide
si1469dh.pdf
auf Bestellung 99 Stücke
Lieferzeit 21-28 Tag (e)