SI1499DH-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 8V 1.6A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V
Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SC-70-6
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V
auf Bestellung 1350 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 1.53 EUR |
| 20+ | 1.34 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.66 EUR |
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Technische Details SI1499DH-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V, Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SC-70-6, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V.
Weitere Produktangebote SI1499DH-T1-GE3 nach Preis ab 0.55 EUR bis 1.55 EUR
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SI1499DH-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -8V -1.6A 2.78W |
auf Bestellung 6525 Stücke: Lieferzeit 14-28 Tag (e) |
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| SI1499DH-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A Mounting: SMD Case: SC70-6; SOT363 Kind of package: reel; tape Power dissipation: 2.78W Polarisation: unipolar Gate charge: 16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -6.5A Drain-source voltage: -8V Drain current: -1.6A On-state resistance: 424mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI1499DH-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 1.6A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 2A, 4.5V Power Dissipation (Max): 2.5W (Ta), 2.78W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SC-70-6 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 4 V |
Produkt ist nicht verfügbar |
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| SI1499DH-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -1.6A; Idm: -6.5A Mounting: SMD Case: SC70-6; SOT363 Kind of package: reel; tape Power dissipation: 2.78W Polarisation: unipolar Gate charge: 16nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -6.5A Drain-source voltage: -8V Drain current: -1.6A On-state resistance: 424mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |