SI1499DH-T1-GE3

SI1499DH-T1-GE3

Hersteller: Vishay
Trans MOSFET P-CH 8V 1.6A 6-Pin SC-70 T/R
si1499dh.pdf
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2960 Stücke
Lieferzeit 14-21 Tag (e)

327+ 0.5 EUR
368+ 0.43 EUR
370+ 0.41 EUR
388+ 0.38 EUR
400+ 0.35 EUR
500+ 0.32 EUR
1000+ 0.28 EUR

Technische Details SI1499DH-T1-GE3

Description: MOSFET P-CH 8V 1.6A SC-70-6, FET Type: MOSFET P-Channel, Metal Oxide, Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V, Power - Max: 2.78W, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Supplier Device Package: SC-70-6 (SOT-363).

Preis SI1499DH-T1-GE3 ab 0.28 EUR bis 0.5 EUR

SI1499DH-T1-GE3
Hersteller: Vishay / Siliconix
MOSFET -8V -1.6A 2.78W
si1499dh-260574.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1499DH-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 8V 1.6A 6-Pin SC-70 T/R
si1499dh.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1499DH-T1-GE3
SI1499DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC-70-6
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
si1499dh.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI1499DH-T1-GE3
SI1499DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC-70-6
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
si1499dh.pdf
auf Bestellung 2585 Stücke
Lieferzeit 21-28 Tag (e)
SI1499DH-T1-GE3
SI1499DH-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 1.6A SC-70-6
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V
Power - Max: 2.78W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-70-6 (SOT-363)
si1499dh.pdf
auf Bestellung 2585 Stücke
Lieferzeit 21-28 Tag (e)