SI1499DH-T1-GE3
Informationen zu Lagerverfügbarkeit und Lieferzeiten
auf Bestellung 2960 Stücke
Lieferzeit 14-21 Tag (e)
auf Bestellung 2960 Stücke

Lieferzeit 14-21 Tag (e)
Technische Details SI1499DH-T1-GE3
Description: MOSFET P-CH 8V 1.6A SC-70-6, FET Type: MOSFET P-Channel, Metal Oxide, Drain to Source Voltage (Vdss): 8V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V, Power - Max: 2.78W, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-TSSOP, SC-88, SOT-363, Supplier Device Package: SC-70-6 (SOT-363).
Preis SI1499DH-T1-GE3 ab 0.28 EUR bis 0.5 EUR
SI1499DH-T1-GE3 Hersteller: Vishay / Siliconix MOSFET -8V -1.6A 2.78W ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
SI1499DH-T1-GE3 Hersteller: Vishay Trans MOSFET P-CH 8V 1.6A 6-Pin SC-70 T/R ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
SI1499DH-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 8V 1.6A SC-70-6 FET Type: MOSFET P-Channel, Metal Oxide Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V Power - Max: 2.78W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363) ![]() |
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen |
|
|
SI1499DH-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 8V 1.6A SC-70-6 FET Type: MOSFET P-Channel, Metal Oxide Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V Power - Max: 2.78W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363) ![]() |
auf Bestellung 2585 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
|
SI1499DH-T1-GE3 Hersteller: Vishay Siliconix Description: MOSFET P-CH 8V 1.6A SC-70-6 FET Type: MOSFET P-Channel, Metal Oxide Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 78 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 4V Power - Max: 2.78W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-70-6 (SOT-363) ![]() |
auf Bestellung 2585 Stücke ![]() Lieferzeit 21-28 Tag (e) |
|
|