SI1553CDL-T1-GE3 Vishay Semiconductors
auf Bestellung 110916 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.14 EUR |
| 59+ | 0.89 EUR |
| 100+ | 0.6 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.34 EUR |
| 9000+ | 0.29 EUR |
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Technische Details SI1553CDL-T1-GE3 Vishay Semiconductors
Description: MOSFET N/P-CH 20V SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 340mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA, Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V, Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6, Part Status: Active.
Weitere Produktangebote SI1553CDL-T1-GE3 nach Preis ab 1.3 EUR bis 1.3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI1553CDL-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N/P-CH 20V SC70-6Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 340mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
auf Bestellung 22 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1553CDL-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N/P-CH 20V 0.7A/0.4A 6-Pin SC-70 T/R |
auf Bestellung 79003 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI1553CDL-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -500/700mA Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20/20V Drain current: -500/700mA Pulsed drain current: -1...2A Power dissipation: 0.34W Case: SC70; SOT363 Gate-source voltage: ±12V On-state resistance: 1.35/1.13Ω Mounting: SMD Gate charge: 3/1.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI1553CDL-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 20V SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 340mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 700mA, 500mA Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Rds On (Max) @ Id, Vgs: 390mOhm @ 700mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.8nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Part Status: Active |
Produkt ist nicht verfügbar |
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| SI1553CDL-T1-GE3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; -20/20V; -500/700mA Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20/20V Drain current: -500/700mA Pulsed drain current: -1...2A Power dissipation: 0.34W Case: SC70; SOT363 Gate-source voltage: ±12V On-state resistance: 1.35/1.13Ω Mounting: SMD Gate charge: 3/1.8nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |