SI1902DL-T1-BE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Description: MOSFET 2N-CH 20V 0.66A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
auf Bestellung 2964 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.2 EUR |
26+ | 1.03 EUR |
100+ | 0.72 EUR |
500+ | 0.56 EUR |
1000+ | 0.46 EUR |
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Technische Details SI1902DL-T1-BE3 Vishay Siliconix
Description: VISHAY - SI1902DL-T1-BE3 - MOSFET, N-CH, 20V, 0.66A, SC-70, tariffCode: 0, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 660mA, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: SC-70, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.32ohm, productTraceability: No, Kanaltyp: N Channel, Verlustleistung, n-Kanal: 270mW, Betriebstemperatur, max.: 150°C, directShipCharge: 25, SVHC: No SVHC (17-Jan-2023).
Weitere Produktangebote SI1902DL-T1-BE3 nach Preis ab 0.37 EUR bis 1.21 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SI1902DL-T1-BE3 | Hersteller : Vishay | MOSFET 2.5V N-CHANNEL DUAL |
auf Bestellung 83562 Stücke: Lieferzeit 14-28 Tag (e) |
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SI1902DL-T1-BE3 | Hersteller : VISHAY |
Description: VISHAY - SI1902DL-T1-BE3 - MOSFET, N-CH, 20V, 0.66A, SC-70 tariffCode: 0 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 660mA Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.32ohm productTraceability: No Kanaltyp: N Channel Verlustleistung, n-Kanal: 270mW Betriebstemperatur, max.: 150°C directShipCharge: 25 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI1902DL-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.66A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 385mOhm @ 660mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |