Technische Details SI1917EDH-T1-E3 VISHAY
Description: MOSFET 2P-CH 12V 1A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 570mW, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 1A, Rds On (Max) @ Id, Vgs: 370mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 450mV @ 100µA (Min), Supplier Device Package: SC-70-6.
Weitere Produktangebote SI1917EDH-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI1917EDH-T1-E3 | Hersteller : VISHAY |
 09+ |
auf Bestellung 9018 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI1917EDH-T1-E3 | Hersteller : VISHAY |
SOT-6 |
auf Bestellung 8537 Stücke: Lieferzeit 21-28 Tag (e) |
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SI1917EDH-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 1A 6-Pin SC-70 T/R |
Produkt ist nicht verfügbar |
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SI1917EDH-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 12V 1A SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 570mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 370mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 100µA (Min) Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |
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SI1917EDH-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 12V 1A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 570mW Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 1A Rds On (Max) @ Id, Vgs: 370mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 100µA (Min) Supplier Device Package: SC-70-6 |
Produkt ist nicht verfügbar |