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SI2301BDS-T1-BE3

SI2301BDS-T1-BE3 Vishay Siliconix

si2301bds.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 2.5-V (G-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.29 EUR
Mindestbestellmenge: 3000
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Technische Details SI2301BDS-T1-BE3 Vishay Siliconix

Description: P-CHANNEL 2.5-V (G-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V.

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SI2301BDS-T1-BE3 SI2301BDS-T1-BE3 Hersteller : Vishay Siliconix si2301bds.pdf Description: P-CHANNEL 2.5-V (G-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V
auf Bestellung 3795 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
32+ 0.83 EUR
100+ 0.5 EUR
500+ 0.46 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 24
SI2301BDS-T1-BE3 SI2301BDS-T1-BE3 Hersteller : Vishay / Siliconix si2301bds.pdf MOSFET P-CHANNEL 2.5V (G-S)
auf Bestellung 50000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
46+1.14 EUR
54+ 0.98 EUR
100+ 0.73 EUR
500+ 0.57 EUR
1000+ 0.52 EUR
3000+ 0.44 EUR
Mindestbestellmenge: 46
SI2301BDS-T1-BE3 Hersteller : Vishay si2301bds.pdf Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23
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SI2301BDS-T1-BE3 Hersteller : Vishay si2301bds.pdf Trans MOSFET P-CH Si 20V 2.2A
Produkt ist nicht verfügbar