auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.2 EUR |
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Technische Details SI2301CDS-T1-E3 Vishay
Description: MOSFET P-CH 20V 3.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 860mW (Ta), 1.6W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V.
Weitere Produktangebote SI2301CDS-T1-E3 nach Preis ab 0.19 EUR bis 0.89 EUR
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SI2301CDS-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 20V 3.1A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V Power Dissipation (Max): 860mW (Ta), 1.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
auf Bestellung 75000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2301CDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 112mOhm @ 2.8A, 4.5V Power Dissipation (Max): 860mW (Ta), 1.6W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V |
auf Bestellung 80063 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2301CDS-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 8V Vgs SOT-23 |
auf Bestellung 360800 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2301CDS-T1-E3 | Hersteller : VISHAY |
Description: VISHAY - SI2301CDS-T1-E3 - Leistungs-MOSFET, p-Kanal, 20 V, 3.1 A, 0.11 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 400mV euEccn: NLR Verlustleistung: 1.6W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 2.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.11ohm |
auf Bestellung 31716 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2301CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2301CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SI2301CDS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.1A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -10A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI2301CDS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.1A; Idm: -10A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.1A Pulsed drain current: -10A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 142mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |