Technische Details SI2302ADS-T1 VISHAY
Description: MOSFET N-CH 20V 2.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 50µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V.
Weitere Produktangebote SI2302ADS-T1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SI2302ADS-T1 | Hersteller : VISHAY |
 07Ј« |
auf Bestellung 1456 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI2302ADS-T1 | Hersteller : VISHAY |
11+ SOT-23 |
auf Bestellung 408000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI2302ADS-T1 | Hersteller : VISHAY |
SOT-23 |
auf Bestellung 9900 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2302ADS-T1 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 2.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.6A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 50µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V |
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