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SI2302DDS-T1-BE3

SI2302DDS-T1-BE3 Vishay Siliconix


si2302dds.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
auf Bestellung 2893 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
37+ 0.72 EUR
100+ 0.36 EUR
500+ 0.32 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 26
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Technische Details SI2302DDS-T1-BE3 Vishay Siliconix

Description: N-CHANNEL 20-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 710mW (Ta), Vgs(th) (Max) @ Id: 850mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V.

Weitere Produktangebote SI2302DDS-T1-BE3 nach Preis ab 0.33 EUR bis 1.16 EUR

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SI2302DDS-T1-BE3 SI2302DDS-T1-BE3 Hersteller : Vishay / Siliconix si2302dds.pdf MOSFET N-CHANNEL 20-V (D-S)
auf Bestellung 74233 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
45+1.16 EUR
57+ 0.93 EUR
100+ 0.63 EUR
1000+ 0.38 EUR
3000+ 0.33 EUR
Mindestbestellmenge: 45
SI2302DDS-T1-BE3 SI2302DDS-T1-BE3 Hersteller : Vishay si2302dds.pdf Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
SI2302DDS-T1-BE3 SI2302DDS-T1-BE3 Hersteller : Vishay Siliconix si2302dds.pdf Description: N-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Produkt ist nicht verfügbar