Technische Details SI2303BDS-T1-E3 VISHAY
Description: MOSFET P-CH 30V 1.49A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta), Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V.
Weitere Produktangebote SI2303BDS-T1-E3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SI2303BDST1E3 | Hersteller : VISHAY |
auf Bestellung 117100 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2303BDS-T1-E3 | Hersteller : VISHAY | 09+ |
auf Bestellung 75018 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2303BDS-T1-E3 | Hersteller : VISHAY | SOT23 |
auf Bestellung 1812000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2303BDS-T1-E3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 1.49A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2303BDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 1.49A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI2303BDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 1.49A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.49A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.7A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V |
Produkt ist nicht verfügbar |