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SI2304BDS-T1-BE3

SI2304BDS-T1-BE3 Vishay Siliconix


si2304bds.pdf Hersteller: Vishay Siliconix
Description: N-CHANNEL 30-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
auf Bestellung 3000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.29 EUR
Mindestbestellmenge: 3000
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Technische Details SI2304BDS-T1-BE3 Vishay Siliconix

Description: N-CHANNEL 30-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V.

Weitere Produktangebote SI2304BDS-T1-BE3 nach Preis ab 0.32 EUR bis 1.5 EUR

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SI2304BDS-T1-BE3 SI2304BDS-T1-BE3 Hersteller : Vishay Siliconix si2304bds.pdf Description: N-CHANNEL 30-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
auf Bestellung 7676 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
31+ 0.85 EUR
100+ 0.51 EUR
500+ 0.47 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 24
SI2304BDS-T1-BE3 SI2304BDS-T1-BE3 Hersteller : Vishay / Siliconix si2304bds.pdf MOSFET N-CHANNEL 30-V (D-S)
auf Bestellung 51714 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
35+1.5 EUR
41+ 1.28 EUR
100+ 0.96 EUR
500+ 0.75 EUR
1000+ 0.58 EUR
3000+ 0.47 EUR
Mindestbestellmenge: 35
SI2304BDS-T1-BE3 Hersteller : Vishay si2304bds.pdf Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R
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