auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.22 EUR |
Produktrezensionen
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Technische Details SI2304BDS-T1-E3 Vishay
Description: MOSFET N-CH 30V 2.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V.
Weitere Produktangebote SI2304BDS-T1-E3 nach Preis ab 0.23 EUR bis 1.11 EUR
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SI2304BDS-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2304BDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 2.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2304BDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R |
auf Bestellung 18244 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2304BDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 2.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V |
auf Bestellung 22186 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2304BDS-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 3.2A 0.07Ohm |
auf Bestellung 184351 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2304BDS-T1-E3 | Hersteller : VISHAY |
Description: VISHAY - SI2304BDS-T1-E3 - Channel Type:N Channel tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 0 rohsCompliant: YES Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 0 euEccn: NLR Verlustleistung: 0 Bauform - Transistor: SOT-23 Anzahl der Pins: 0 Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 0 Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 SVHC: No SVHC (17-Jan-2023) |
auf Bestellung 18244 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2304BDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2304BDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2304BDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SI2304BDS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.2A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI2304BDS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.2A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 1.08W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.105Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |