SI2305ADS-T1-GE3

SI2305ADS-T1-GE3

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Si2305ADS.pdf
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Technische Details SI2305ADS-T1-GE3

Description: MOSFET P-CH 8V 5.4A SOT23-3, Package / Case: TO-236-3, SC-59, SOT-23-3, Supplier Device Package: SOT-23-3 (TO-236), Mounting Type: Surface Mount, Operating Temperature: -50°C ~ 150°C (TJ), Power Dissipation (Max): 960mW (Ta), 1.7W (Tc), Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Drain to Source Voltage (Vdss): 8V, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Part Status: Obsolete, Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $), Vgs (Max): ±8V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V.

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SI2305ADS-T1-GE3
SI2305ADS-T1-GE3
Hersteller: Vishay
Trans MOSFET P-CH 8V 5.4A 3-Pin SOT-23 T/R
si2305ad.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2305ADS-T1-GE3
SI2305ADS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Si2305ADS.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2305ADS-T1-GE3
SI2305ADS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.4A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 740pF @ 4V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Drain to Source Voltage (Vdss): 8V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Obsolete
Packaging: Digi-Reel® (Zusätzliche Zahlung für die Spule beträgt 7 $)
Vgs (Max): ±8V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Si2305ADS.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen
SI2305ADS-T1-GE3
SI2305ADS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 5.4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.1A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 4 V
Si2305ADS.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen