auf Bestellung 31208 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 49+ | 1.06 EUR |
| 61+ | 0.86 EUR |
| 100+ | 0.59 EUR |
| 1000+ | 0.34 EUR |
| 3000+ | 0.28 EUR |
| 9000+ | 0.26 EUR |
| 24000+ | 0.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2305CDS-T1-BE3 Vishay / Siliconix
Description: P-CHANNEL 8-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 5.8A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V, Power Dissipation (Max): 960mW (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V.
Weitere Produktangebote SI2305CDS-T1-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| SI2305CDS-T1-BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 8V 4.4A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
||
 |
SI2305CDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 8-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 5.8A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V |
Produkt ist nicht verfügbar |
|
|
|
SI2305CDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 8-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 5.8A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.4A, 4.5V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 960 pF @ 4 V |
Produkt ist nicht verfügbar |