SI2305DS-T1-GE3

SI2305DS-T1-GE3

SI2305DS-T1-GE3

Hersteller: Vishay / Siliconix
MOSFET RECOMMENDED ALT 781-SI2305CDS-GE3
70833-1765422.pdf
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Technische Details SI2305DS-T1-GE3

Description: MOSFET P-CH 8V 3.5A SOT23-3, Supplier Device Package: SOT-23-3 (TO-236), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Power - Max: 1.25W, Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 4V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V, Vgs(th) (Max) @ Id: 800mV @ 250µA, Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Drain to Source Voltage (Vdss): 8V, FET Feature: Logic Level Gate, FET Type: MOSFET P-Channel, Metal Oxide.

Preis SI2305DS-T1-GE3 ab 0 EUR bis 0 EUR

SI2305DS-T1-GE3
SI2305DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 3.5A SOT23-3
Supplier Device Package: SOT-23-3 (TO-236)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Power - Max: 1.25W
Input Capacitance (Ciss) (Max) @ Vds: 1245pF @ 4V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Rds On (Max) @ Id, Vgs: 52mOhm @ 3.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drain to Source Voltage (Vdss): 8V
FET Feature: Logic Level Gate
FET Type: MOSFET P-Channel, Metal Oxide
70833.pdf
Produkt ist nicht verfügbar, Sie können Anfrage senden wenn Sie Produkt in den Warenkorb hinzufügen