SI2307-TP Micro Commercial Components
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| 9000+ | 0.099 EUR |
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Technische Details SI2307-TP Micro Commercial Components
Description: MOSFET P-CH 30V 2.7A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 135mOhm @ 2.6A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V.
Weitere Produktangebote SI2307-TP nach Preis ab 0.055 EUR bis 1.02 EUR
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SI2307-TP | Hersteller : Micro Commercial Components |
 Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307-TP | Hersteller : Micro Commercial Components |
Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307-TP | Hersteller : MICRO COMMERCIAL COMPONENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.7A; Idm: -12A; 1.1W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -12A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 138mΩ Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2880 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2307-TP | Hersteller : MICRO COMMERCIAL COMPONENTS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; Trench; unipolar; -30V; -2.7A; Idm: -12A; 1.1W Type of transistor: P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Pulsed drain current: -12A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 138mΩ Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307-TP | Hersteller : Micro Commercial Components (MCC) |
MOSFET P-CHANNEL MOSFET |
auf Bestellung 9471 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2307-TP | Hersteller : Micro Commercial Components |
Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307-TP | Hersteller : Micro Commercial Components |
Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2307-TP | Hersteller : Micro Commercial Co |
Description: MOSFET P-CH 30V 2.7A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2.6A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI2307-TP | Hersteller : Micro Commercial Co |
Description: MOSFET P-CH 30V 2.7A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2.6A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V |
Produkt ist nicht verfügbar |