SI2307BDS-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
Description: MOSFET P-CH 30V 2.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.5 EUR |
6000+ | 0.47 EUR |
9000+ | 0.44 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2307BDS-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 30V 2.5A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V.
Weitere Produktangebote SI2307BDS-T1-E3 nach Preis ab 0.3 EUR bis 1.5 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SI2307BDS-T1-E3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307BDS-T1-E3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R |
auf Bestellung 5345 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307BDS-T1-E3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R |
auf Bestellung 2860 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307BDS-T1-E3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R |
auf Bestellung 2860 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307BDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 2.5A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 78mOhm @ 3.2A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 15 V |
auf Bestellung 31084 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2307BDS-T1-E3 | Hersteller : Vishay Semiconductors | MOSFET 30V 3.2A 1.25W |
auf Bestellung 111431 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2307BDS-T1-E3 | Hersteller : VISHAY |
Description: VISHAY - SI2307BDS-T1-E3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.063 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 750mW Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.063ohm |
auf Bestellung 6027 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307BDS-T1-E3 | Hersteller : VISHAY |
Description: VISHAY - SI2307BDS-T1-E3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.5 A, 0.063 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 750mW Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.063ohm |
auf Bestellung 6027 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2307BDST1E3 | Hersteller : VISHAY |
auf Bestellung 2918 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2307BDS-T1-E3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2307BDS-T1-E3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2307BDS-T1-E3 | Hersteller : Vishay | Trans MOSFET P-CH 30V 2.5A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2307BDS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -12A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI2307BDS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -12A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |