Technische Details SI2309DS-T1-E3 VISHAY
Description: MOSFET P-CH 60V 1.25A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta), Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Supplier Device Package: SOT-23-3 (TO-236), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V.
Weitere Produktangebote SI2309DS-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| SI2309DS-T1-E3 | Hersteller : VISHAY | 09+ SOP |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI2309DS-T1-E3 | Hersteller : VISHAY | SOT-23 09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2309DS-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 60V 1.25A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2309DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 1.25A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V |
Produkt ist nicht verfügbar |
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SI2309DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 1.25A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.25A (Ta) Rds On (Max) @ Id, Vgs: 340mOhm @ 1.25A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V |
Produkt ist nicht verfügbar |