SI2312B-TP Micro Commercial Co
Hersteller: Micro Commercial CoDescription: N-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 8 V
auf Bestellung 2545 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 32+ | 0.83 EUR |
| 40+ | 0.66 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.25 EUR |
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Technische Details SI2312B-TP Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1.25W, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 8 V.
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